974 lines
29 KiB
JSON
974 lines
29 KiB
JSON
{
|
|
"OtherCopyrightsInfo": null,
|
|
"PatentsInfo": {
|
|
"list": [
|
|
{
|
|
"createDate": "2021-05-14",
|
|
"createNum": "CN202030314620.9",
|
|
"patentName": "承片台",
|
|
"type": "外观专利"
|
|
},
|
|
{
|
|
"createDate": "2021-05-14",
|
|
"createNum": "CN202021141566.3",
|
|
"patentName": "一种承片台及晶圆加工系统",
|
|
"type": "实用新型"
|
|
},
|
|
{
|
|
"createDate": "2021-03-09",
|
|
"createNum": "CN202030314624.7",
|
|
"patentName": "承片台",
|
|
"type": "外观专利"
|
|
},
|
|
{
|
|
"createDate": "2021-01-29",
|
|
"createNum": "CN202021142203.1",
|
|
"patentName": "一种承片台及晶圆加工系统",
|
|
"type": "实用新型"
|
|
},
|
|
{
|
|
"createDate": "2018-12-11",
|
|
"createNum": "CN201610082313.5",
|
|
"patentName": "恒流二极管结构及其形成方法",
|
|
"type": "发明专利"
|
|
},
|
|
{
|
|
"createDate": "2018-12-11",
|
|
"createNum": "CN201610082486.7",
|
|
"patentName": "一种恒流二极管结构及其形成方法",
|
|
"type": "发明专利"
|
|
},
|
|
{
|
|
"createDate": "2018-09-18",
|
|
"createNum": "CN201410799294.9",
|
|
"patentName": "半导体器件及其形成方法",
|
|
"type": "发明专利"
|
|
},
|
|
{
|
|
"createDate": "2018-08-21",
|
|
"createNum": "CN201721921214.8",
|
|
"patentName": "流体控制系统",
|
|
"type": "实用新型"
|
|
},
|
|
{
|
|
"createDate": "2018-08-14",
|
|
"createNum": "CN201410799354.7",
|
|
"patentName": "一种半导体器件及其形成方法",
|
|
"type": "发明专利"
|
|
},
|
|
{
|
|
"createDate": "2018-06-26",
|
|
"createNum": "CN201410628678.4",
|
|
"patentName": "沟槽器件的制作方法",
|
|
"type": "发明专利"
|
|
},
|
|
{
|
|
"createDate": "2018-04-27",
|
|
"createNum": "CN201721306178.4",
|
|
"patentName": "换热系统及制冷空调系统",
|
|
"type": "实用新型"
|
|
},
|
|
{
|
|
"createDate": "2017-09-19",
|
|
"createNum": "CN201510172229.8",
|
|
"patentName": "一种半导体结构及其形成方法",
|
|
"type": "发明专利"
|
|
},
|
|
{
|
|
"createDate": "2017-08-08",
|
|
"createNum": "CN201410628621.4",
|
|
"patentName": "沟槽器件的制作方法",
|
|
"type": "发明专利"
|
|
},
|
|
{
|
|
"createDate": "2017-04-26",
|
|
"createNum": "CN201620990983.2",
|
|
"patentName": "定位结构及硅片加工设备",
|
|
"type": "实用新型"
|
|
},
|
|
{
|
|
"createDate": "2017-03-15",
|
|
"createNum": "CN201620902333.8",
|
|
"patentName": "抽真空系统",
|
|
"type": "实用新型"
|
|
},
|
|
{
|
|
"createDate": "2017-02-15",
|
|
"createNum": "CN201620782008.2",
|
|
"patentName": "抽真空系统",
|
|
"type": "实用新型"
|
|
},
|
|
{
|
|
"createDate": "2017-02-08",
|
|
"createNum": "CN201310674022.1",
|
|
"patentName": "双极PNP晶体管及其制造方法",
|
|
"type": "发明专利"
|
|
},
|
|
{
|
|
"createDate": "2016-12-21",
|
|
"createNum": "CN201210532715.2",
|
|
"patentName": "肖特基二极管及其制作方法",
|
|
"type": "发明专利"
|
|
},
|
|
{
|
|
"createDate": "2016-08-31",
|
|
"createNum": "CN201620116899.8",
|
|
"patentName": "一种恒流二极管结构",
|
|
"type": "实用新型"
|
|
},
|
|
{
|
|
"createDate": "2016-07-20",
|
|
"createNum": "CN201310669550.8",
|
|
"patentName": "双极NPN晶体管及其制造方法",
|
|
"type": "发明专利"
|
|
},
|
|
{
|
|
"createDate": "2016-07-06",
|
|
"createNum": "CN201620117311.0",
|
|
"patentName": "恒流二极管结构",
|
|
"type": "实用新型"
|
|
},
|
|
{
|
|
"createDate": "2016-05-25",
|
|
"createNum": "CN201610082313.5",
|
|
"patentName": "恒流二极管结构及其形成方法",
|
|
"type": "发明专利"
|
|
},
|
|
{
|
|
"createDate": "2016-05-04",
|
|
"createNum": "CN201610082486.7",
|
|
"patentName": "一种恒流二极管结构及其形成方法",
|
|
"type": "发明专利"
|
|
},
|
|
{
|
|
"createDate": "2016-01-20",
|
|
"createNum": "CN201210594393.4",
|
|
"patentName": "采用刻槽工艺形成的恒流二极管及其制造方法",
|
|
"type": "发明专利"
|
|
},
|
|
{
|
|
"createDate": "2015-11-25",
|
|
"createNum": "CN201210587556.6",
|
|
"patentName": "具有三层介质钝化结构的二极管及其制造方法",
|
|
"type": "发明专利"
|
|
},
|
|
{
|
|
"createDate": "2015-09-02",
|
|
"createNum": "CN201210496525.X",
|
|
"patentName": "外延缺陷分析结构及制造方法和外延缺陷的分析方法",
|
|
"type": "发明专利"
|
|
},
|
|
{
|
|
"createDate": "2015-08-12",
|
|
"createNum": "CN201510172229.8",
|
|
"patentName": "一种半导体结构及其形成方法",
|
|
"type": "发明专利"
|
|
},
|
|
{
|
|
"createDate": "2015-07-29",
|
|
"createNum": "CN201520219460.3",
|
|
"patentName": "一种半导体结构",
|
|
"type": "实用新型"
|
|
},
|
|
{
|
|
"createDate": "2015-06-17",
|
|
"createNum": "CN201410799294.9",
|
|
"patentName": "半导体器件及其形成方法",
|
|
"type": "发明专利"
|
|
},
|
|
{
|
|
"createDate": "2015-05-06",
|
|
"createNum": "CN201410799354.7",
|
|
"patentName": "一种半导体器件及其形成方法",
|
|
"type": "发明专利"
|
|
},
|
|
{
|
|
"createDate": "2015-04-22",
|
|
"createNum": "CN201420816355.3",
|
|
"patentName": "半导体器件",
|
|
"type": "实用新型"
|
|
},
|
|
{
|
|
"createDate": "2015-04-22",
|
|
"createNum": "CN201420814078.2",
|
|
"patentName": "一种半导体器件",
|
|
"type": "实用新型"
|
|
},
|
|
{
|
|
"createDate": "2015-03-11",
|
|
"createNum": "CN201410628621.4",
|
|
"patentName": "沟槽器件的制作方法",
|
|
"type": "发明专利"
|
|
},
|
|
{
|
|
"createDate": "2015-03-11",
|
|
"createNum": "CN201410628678.4",
|
|
"patentName": "沟槽器件的制作方法",
|
|
"type": "发明专利"
|
|
},
|
|
{
|
|
"createDate": "2015-01-07",
|
|
"createNum": "CN201210205702.4",
|
|
"patentName": "平面高压晶体管的分压环的制造方法",
|
|
"type": "发明专利"
|
|
},
|
|
{
|
|
"createDate": "2014-03-19",
|
|
"createNum": "CN201310674022.1",
|
|
"patentName": "双极PNP晶体管及其制造方法",
|
|
"type": "发明专利"
|
|
},
|
|
{
|
|
"createDate": "2014-03-12",
|
|
"createNum": "CN201310669550.8",
|
|
"patentName": "双极NPN晶体管及其制造方法",
|
|
"type": "发明专利"
|
|
},
|
|
{
|
|
"createDate": "2013-06-19",
|
|
"createNum": "CN201220750194.3",
|
|
"patentName": "采用刻槽工艺形成的恒流二极管",
|
|
"type": "实用新型"
|
|
},
|
|
{
|
|
"createDate": "2013-06-19",
|
|
"createNum": "CN201220681432.X",
|
|
"patentName": "肖特基二极管",
|
|
"type": "实用新型"
|
|
},
|
|
{
|
|
"createDate": "2013-06-12",
|
|
"createNum": "CN201220747337.5",
|
|
"patentName": "具有三层介质钝化结构的二极管",
|
|
"type": "实用新型"
|
|
},
|
|
{
|
|
"createDate": "2013-05-01",
|
|
"createNum": "CN201220641783.8",
|
|
"patentName": "外延缺陷分析结构",
|
|
"type": "实用新型"
|
|
},
|
|
{
|
|
"createDate": "2013-04-17",
|
|
"createNum": "CN201210587556.6",
|
|
"patentName": "具有三层介质钝化结构的二极管及其制造方法",
|
|
"type": "发明专利"
|
|
},
|
|
{
|
|
"createDate": "2013-04-10",
|
|
"createNum": "CN201210594393.4",
|
|
"patentName": "采用刻槽工艺形成的恒流二极管及其制造方法",
|
|
"type": "发明专利"
|
|
},
|
|
{
|
|
"createDate": "2013-03-20",
|
|
"createNum": "CN201210532715.2",
|
|
"patentName": "肖特基二极管及其制作方法",
|
|
"type": "发明专利"
|
|
},
|
|
{
|
|
"createDate": "2013-02-13",
|
|
"createNum": "CN201210496525.X",
|
|
"patentName": "外延缺陷分析结构及制造方法和外延缺陷的分析方法",
|
|
"type": "发明专利"
|
|
},
|
|
{
|
|
"createDate": "2013-01-23",
|
|
"createNum": "CN201010606126.5",
|
|
"patentName": "一种在P+衬底上制备低压二极管芯片的方法及其结构",
|
|
"type": "发明专利"
|
|
},
|
|
{
|
|
"createDate": "2013-01-16",
|
|
"createNum": "CN201010606104.9",
|
|
"patentName": "LED保护二极管的结构及其制造方法",
|
|
"type": "发明专利"
|
|
},
|
|
{
|
|
"createDate": "2012-10-31",
|
|
"createNum": "CN201210205702.4",
|
|
"patentName": "平面高压晶体管的分压环的制造方法",
|
|
"type": "发明专利"
|
|
},
|
|
{
|
|
"createDate": "2011-08-17",
|
|
"createNum": "CN201010606104.9",
|
|
"patentName": "LED保护二极管的结构及其制造方法",
|
|
"type": "发明专利"
|
|
},
|
|
{
|
|
"createDate": "2011-08-03",
|
|
"createNum": "CN201010606126.5",
|
|
"patentName": "一种在P+衬底上制备低压二极管芯片的方法及其结构",
|
|
"type": "发明专利"
|
|
}
|
|
],
|
|
"total": 50
|
|
},
|
|
"ProfileTags": [],
|
|
"SoftwareCopyrightsInfo": null,
|
|
"TrademarksInfo": null,
|
|
"base": {
|
|
"allows": [
|
|
{
|
|
"docName": "《排污许可证》核发",
|
|
"docNo": "川环许A金0328",
|
|
"endDate": "2016-08-15 00:00:00"
|
|
},
|
|
{
|
|
"docName": "特种设备使用许可登记",
|
|
"docNo": "容2LS川AI0500",
|
|
"endDate": "2013-12-09 00:00:00"
|
|
},
|
|
{
|
|
"docName": "特种设备使用许可登记",
|
|
"docNo": "容3MC川AI0417",
|
|
"endDate": "2013-03-21 00:00:00"
|
|
},
|
|
{
|
|
"docName": "特种设备使用许可登记",
|
|
"docNo": "容1LC川AI0416",
|
|
"endDate": "2013-03-21 00:00:00"
|
|
},
|
|
{
|
|
"docName": "特种设备使用许可登记",
|
|
"docNo": "锅川AI0163",
|
|
"endDate": "2013-08-02 00:00:00"
|
|
},
|
|
{
|
|
"docName": "特种设备使用许可登记",
|
|
"docNo": "容1LC川AI0505",
|
|
"endDate": "2013-12-09 00:00:00"
|
|
},
|
|
{
|
|
"docName": "特种设备使用许可登记",
|
|
"docNo": "容2LS川AI0503",
|
|
"endDate": "2013-12-09 00:00:00"
|
|
},
|
|
{
|
|
"docName": "特种设备使用许可登记",
|
|
"docNo": "容1LS川AI0504",
|
|
"endDate": "2013-12-09 00:00:00"
|
|
},
|
|
{
|
|
"docName": "特种设备使用许可登记",
|
|
"docNo": "容2MC川AI0496",
|
|
"endDate": "2013-12-09 00:00:00"
|
|
},
|
|
{
|
|
"docName": "特种设备使用许可登记",
|
|
"docNo": "容1LC川AI0535",
|
|
"endDate": "2014-07-21 00:00:00"
|
|
},
|
|
{
|
|
"docName": "特种设备使用许可登记",
|
|
"docNo": "容2LC川AI0601",
|
|
"endDate": "2015-07-08 00:00:00"
|
|
},
|
|
{
|
|
"docName": "特种设备使用许可登记",
|
|
"docNo": "车11川A02301(17)",
|
|
"endDate": "2017-10-09 00:00:00"
|
|
},
|
|
{
|
|
"docName": "特种设备使用许可登记",
|
|
"docNo": "梯11川A85926(18)",
|
|
"endDate": "2018-07-16 00:00:00"
|
|
},
|
|
{
|
|
"docName": "特种设备使用许可登记",
|
|
"docNo": "TSG 08-2017",
|
|
"endDate": "2020-08-04 00:00:00"
|
|
},
|
|
{
|
|
"docName": "YJ08",
|
|
"docNo": "JY35101210007489",
|
|
"endDate": "2019-01-14 00:00:00"
|
|
},
|
|
{
|
|
"docName": "特种设备使用许可登记",
|
|
"docNo": "容2LS川AI0506",
|
|
"endDate": "2013-12-09 00:00:00"
|
|
},
|
|
{
|
|
"docName": "特种设备使用许可登记",
|
|
"docNo": "容2MC川AI0499",
|
|
"endDate": "2013-12-09 00:00:00"
|
|
},
|
|
{
|
|
"docName": "特种设备使用许可登记",
|
|
"docNo": "容2MC川AI0495",
|
|
"endDate": "2013-12-09 00:00:00"
|
|
},
|
|
{
|
|
"docName": "特种设备使用许可登记",
|
|
"docNo": "容2LS川AI0501",
|
|
"endDate": "2013-12-09 00:00:00"
|
|
},
|
|
{
|
|
"docName": "特种设备使用许可登记",
|
|
"docNo": "容2MS川AI0498",
|
|
"endDate": "2013-12-09 00:00:00"
|
|
},
|
|
{
|
|
"docName": "特种设备使用许可登记",
|
|
"docNo": "容1LC川AI0497",
|
|
"endDate": "2013-12-09 00:00:00"
|
|
},
|
|
{
|
|
"docName": "特种设备使用许可登记",
|
|
"docNo": "容2LS川AI0507",
|
|
"endDate": "2013-12-09 00:00:00"
|
|
},
|
|
{
|
|
"docName": "特种设备使用许可登记",
|
|
"docNo": "容2MS川AI0508",
|
|
"endDate": "2013-12-09 00:00:00"
|
|
},
|
|
{
|
|
"docName": "特种设备使用许可登记",
|
|
"docNo": "容2LS川AI0502",
|
|
"endDate": "2013-12-09 00:00:00"
|
|
}
|
|
],
|
|
"base": {
|
|
"OtherCopyrightsInfo": 0,
|
|
"PatentsInfo": 50,
|
|
"ProfileTags": [],
|
|
"SoftwareCopyrightsInfo": 0,
|
|
"TrademarksInfo": 0,
|
|
"allows": 24,
|
|
"authority": "金堂县市场监督管理局",
|
|
"branches": 0,
|
|
"businessDateFrom": "2010-11-18 00:00:00",
|
|
"businessDateTo": "2030-11-17 00:00:00",
|
|
"businessScope": "集成电路、半导体分立器件、发光半导体等半导体产品的设计、制造、销售及相关技术转让；相关的原材料、机械设备的销售(经向环保部门排污申报后方可经营）；货物进出口和技术进出口。（法律、法规禁止经营的项目除外，法律、法规限制经营的项目取得许可后方可经营）。",
|
|
"capital": "120000.000000万人民币",
|
|
"changes": 59,
|
|
"companyAddress": "四川省成都市金堂县淮口街道成都-阿坝工业集中发展区士芯路9号",
|
|
"companyCode": "510121000020586",
|
|
"companyName": "成都士兰半导体制造有限公司",
|
|
"companyStatus": "存续（在营、开业、在册）",
|
|
"companyType": "其他有限责任公司",
|
|
"contactInfo": {
|
|
"email": "497837510@qq.com",
|
|
"phoneNumber": "028-84925088",
|
|
"website": [
|
|
{
|
|
"name": "成都士兰半导体制造有限公司",
|
|
"url": "www.silancd.cn"
|
|
},
|
|
{
|
|
"name": "成都士兰半导体制造有限公司",
|
|
"url": "www.silancd.com"
|
|
}
|
|
]
|
|
},
|
|
"creditNo": "91510121564470905W",
|
|
"employees": 3,
|
|
"establishDate": "2010-11-18 00:00:00",
|
|
"exceptions": 0,
|
|
"industry": {
|
|
"industryL1Name": "制造业",
|
|
"industryL2Name": "计算机、通信和其他电子设备制造业"
|
|
},
|
|
"isOnStock": "0",
|
|
"issueDate": "2021-10-20 00:00:00",
|
|
"keyNo": "c980d39e40bf9a86651e4639b6935e8c",
|
|
"legalPerson": "陈向东",
|
|
"liquidation": null,
|
|
"mPledges": 1,
|
|
"orgCode": "564470905",
|
|
"originalName": 0,
|
|
"partners": 3,
|
|
"pledges": 0,
|
|
"province": "SC",
|
|
"punishes": 0,
|
|
"revokeDate": null,
|
|
"shiXinItems": 0,
|
|
"spotChecks": 1,
|
|
"stockNumber": null,
|
|
"stockType": null,
|
|
"taxCreditltems": 4,
|
|
"updatedDate": null,
|
|
"zhiXingItems": 0
|
|
},
|
|
"branches": [],
|
|
"changes": [
|
|
{
|
|
"changeAfter": "/",
|
|
"changeBefore": "/",
|
|
"changeDate": "2014-03-26 00:00:00",
|
|
"changeField": "换发证照"
|
|
},
|
|
{
|
|
"changeAfter": "杭州士兰微电子股份有限公司,货币,30000万元;",
|
|
"changeBefore": "杭州士兰微电子股份有限公司;",
|
|
"changeDate": "2013-11-28 00:00:00",
|
|
"changeField": "股东或股份发起人改变姓名或名称变更"
|
|
},
|
|
{
|
|
"changeAfter": "杭州士兰微电子股份有限公司 出资 84000万人民币;四川省集成电路和信息安全产业投资基金有限公司 出资 32000万人民币;阿坝州振兴产业发展股权投资基金合伙企业（有限合伙） 出资 4000万人民币;",
|
|
"changeBefore": "杭州士兰微电子股份有限公司 出资 81000万人民币;四川省集成电路和信息安全产业投资基金有限公司 出资 15000万人民币;阿坝州振兴产业发展股权投资基金合伙企业（有限合伙） 出资 4000万人民币;",
|
|
"changeDate": "2021-10-20 00:00:00",
|
|
"changeField": "投资人(股权)变更"
|
|
},
|
|
{
|
|
"changeAfter": "70000",
|
|
"changeBefore": "60000",
|
|
"changeDate": "2018-02-06 00:00:00",
|
|
"changeField": "其他事项备案"
|
|
},
|
|
{
|
|
"changeAfter": "杭州士兰微电子股份有限公司,货币,30000万元;",
|
|
"changeBefore": "杭州士兰微电子股份有限公司;",
|
|
"changeDate": "2013-11-28 00:00:00",
|
|
"changeField": "出资额变更"
|
|
},
|
|
{
|
|
"changeAfter": "/",
|
|
"changeBefore": "/",
|
|
"changeDate": "2016-01-13 00:00:00",
|
|
"changeField": "其他事项备案"
|
|
},
|
|
{
|
|
"changeAfter": "60000",
|
|
"changeBefore": "55000",
|
|
"changeDate": "2017-10-23 00:00:00",
|
|
"changeField": "其他事项备案"
|
|
},
|
|
{
|
|
"changeAfter": "60000",
|
|
"changeBefore": "杭州士兰微电子股份有限公司;",
|
|
"changeDate": "2017-10-24 00:00:00",
|
|
"changeField": "出资额变更"
|
|
},
|
|
{
|
|
"changeAfter": "集成电路、半导体分立器件、发光半导体等半导体产品的设计、制造、销售及相关技术转让；相关的原材料、机械设备的销售(经向环保部门排污申报后方可经营）；货物进出口和技术进出口。（法律、法规禁止经营的项目除外，法律、法规限制经营的项目取得许可后方可经营）。",
|
|
"changeBefore": "集成电路、半导体分立器件、发光半导体等半导体产品的设计、制造、销售(经向环保部门排污申报后方可经营）；货物进出口。（法律、法规禁止经营的项目除外，法律、法规限制经营的项目取得许可后方可经营）。",
|
|
"changeDate": "2017-10-23 00:00:00",
|
|
"changeField": "投资人(股权)变更"
|
|
},
|
|
{
|
|
"changeAfter": "60000",
|
|
"changeBefore": "杭州士兰微电子股份有限公司;",
|
|
"changeDate": "2017-10-24 00:00:00",
|
|
"changeField": "股东或股份发起人改变姓名或名称变更"
|
|
},
|
|
{
|
|
"changeAfter": "30000",
|
|
"changeBefore": "20000",
|
|
"changeDate": "2013-11-28 00:00:00",
|
|
"changeField": "注册资本(金)变更"
|
|
},
|
|
{
|
|
"changeAfter": "1152",
|
|
"changeBefore": "1190",
|
|
"changeDate": "2012-05-16 00:00:00",
|
|
"changeField": "企业类型变更"
|
|
},
|
|
{
|
|
"changeAfter": "杭州士兰微电子股份有限公司,货币;",
|
|
"changeBefore": "杭州士兰微电子股份有限公司;",
|
|
"changeDate": "2014-10-23 00:00:00",
|
|
"changeField": "股东或股份发起人改变姓名或名称变更"
|
|
},
|
|
{
|
|
"changeAfter": "",
|
|
"changeBefore": "杭州士兰微电子股份有限公司;",
|
|
"changeDate": "2018-02-06 00:00:00",
|
|
"changeField": "股东或股份发起人改变姓名或名称变更"
|
|
},
|
|
{
|
|
"changeAfter": "100000.000000万人民币",
|
|
"changeBefore": "81000万人民币",
|
|
"changeDate": "2020-11-10 00:00:00",
|
|
"changeField": "注册资本变更"
|
|
},
|
|
{
|
|
"changeAfter": "30000",
|
|
"changeBefore": "20000",
|
|
"changeDate": "2013-11-28 00:00:00",
|
|
"changeField": "其他事项备案"
|
|
},
|
|
{
|
|
"changeAfter": "30000",
|
|
"changeBefore": "20000",
|
|
"changeDate": "2013-11-28 00:00:00",
|
|
"changeField": "实收资本变更"
|
|
},
|
|
{
|
|
"changeAfter": "40000",
|
|
"changeBefore": "杭州士兰微电子股份有限公司;",
|
|
"changeDate": "2014-10-23 00:00:00",
|
|
"changeField": "出资额变更"
|
|
},
|
|
{
|
|
"changeAfter": "60000",
|
|
"changeBefore": "55000",
|
|
"changeDate": "2017-10-23 00:00:00",
|
|
"changeField": "注册资本(金)变更"
|
|
},
|
|
{
|
|
"changeAfter": "50000",
|
|
"changeBefore": "40000",
|
|
"changeDate": "2015-05-13 00:00:00",
|
|
"changeField": "注册资本(金)变更"
|
|
},
|
|
{
|
|
"changeAfter": "/",
|
|
"changeBefore": "/",
|
|
"changeDate": "2016-01-13 00:00:00",
|
|
"changeField": "换发证照"
|
|
},
|
|
{
|
|
"changeAfter": "40000",
|
|
"changeBefore": "30000",
|
|
"changeDate": "2014-10-23 00:00:00",
|
|
"changeField": "其他事项备案"
|
|
},
|
|
{
|
|
"changeAfter": "55000",
|
|
"changeBefore": "50000",
|
|
"changeDate": "2016-05-04 00:00:00",
|
|
"changeField": "其他事项备案"
|
|
},
|
|
{
|
|
"changeAfter": "20000",
|
|
"changeBefore": "14000",
|
|
"changeDate": "2011-08-23 00:00:00",
|
|
"changeField": "其他事项备案"
|
|
},
|
|
{
|
|
"changeAfter": "55000",
|
|
"changeBefore": "杭州士兰微电子股份有限公司;",
|
|
"changeDate": "2016-05-04 00:00:00",
|
|
"changeField": "出资额变更"
|
|
},
|
|
{
|
|
"changeAfter": "10000",
|
|
"changeBefore": "6000",
|
|
"changeDate": "2011-04-29 00:00:00",
|
|
"changeField": "其他事项备案"
|
|
},
|
|
{
|
|
"changeAfter": "杭州士兰微电子股份有限公司,货币;",
|
|
"changeBefore": "杭州士兰微电子股份有限公司;",
|
|
"changeDate": "2014-10-23 00:00:00",
|
|
"changeField": "出资方式变更"
|
|
},
|
|
{
|
|
"changeAfter": "杭州士兰微电子股份有限公司,货币;",
|
|
"changeBefore": "杭州士兰微电子股份有限公司;",
|
|
"changeDate": "2013-11-28 00:00:00",
|
|
"changeField": "出资方式变更"
|
|
},
|
|
{
|
|
"changeAfter": "70000",
|
|
"changeBefore": "杭州士兰微电子股份有限公司;",
|
|
"changeDate": "2018-02-06 00:00:00",
|
|
"changeField": "股东或股份发起人改变姓名或名称变更"
|
|
},
|
|
{
|
|
"changeAfter": "30000",
|
|
"changeBefore": "杭州士兰微电子股份有限公司;",
|
|
"changeDate": "2013-12-02 00:00:00",
|
|
"changeField": "股东或股份发起人改变姓名或名称变更"
|
|
},
|
|
{
|
|
"changeAfter": "杭州士兰微电子股份有限公司;",
|
|
"changeBefore": "杭州士兰明芯科技有限公司;杭州士兰微电子股份有限公司;",
|
|
"changeDate": "2012-05-16 00:00:00",
|
|
"changeField": "投资人(股权)变更"
|
|
},
|
|
{
|
|
"changeAfter": "四川省成都市金堂县淮口街道成都-阿坝工业集中发展区士芯路9号",
|
|
"changeBefore": "成都－阿坝工业集中发展区内",
|
|
"changeDate": "2020-11-10 00:00:00",
|
|
"changeField": "地址变更"
|
|
},
|
|
{
|
|
"changeAfter": "81000.000000万人民币",
|
|
"changeBefore": "70000万人民币",
|
|
"changeDate": "2020-08-12 00:00:00",
|
|
"changeField": "注册资本变更"
|
|
},
|
|
{
|
|
"changeAfter": "集成电路、半导体分立器件、发光半导体等半导体产品的设计、制造、销售及相关技术转让；相关的原材料、机械设备的销售(经向环保部门排污申报后方可经营）；货物进出口和技术进出口。（法律、法规禁止经营的项目除外，法律、法规限制经营的项目取得许可后方可经营）。",
|
|
"changeBefore": "集成电路、半导体分立器件、发光半导体等半导体产品的设计、制造、销售(经向环保部门排污申报后方可经营）；货物进出口。（法律、法规禁止经营的项目除外，法律、法规限制经营的项目取得许可后方可经营）。",
|
|
"changeDate": "2017-10-23 00:00:00",
|
|
"changeField": "经营范围变更"
|
|
},
|
|
{
|
|
"changeAfter": "40000",
|
|
"changeBefore": "30000",
|
|
"changeDate": "2014-10-23 00:00:00",
|
|
"changeField": "注册资本(金)变更"
|
|
},
|
|
{
|
|
"changeAfter": "14000",
|
|
"changeBefore": "10000",
|
|
"changeDate": "2011-06-24 00:00:00",
|
|
"changeField": "实收资本变更"
|
|
},
|
|
{
|
|
"changeAfter": "10000",
|
|
"changeBefore": "6000",
|
|
"changeDate": "2011-04-29 00:00:00",
|
|
"changeField": "实收资本变更"
|
|
},
|
|
{
|
|
"changeAfter": "杭州士兰微电子股份有限公司 出资 81000万人民币;",
|
|
"changeBefore": "杭州士兰微电子股份有限公司 出资 70000万人民币;",
|
|
"changeDate": "2020-08-12 00:00:00",
|
|
"changeField": "投资人(股权)变更"
|
|
},
|
|
{
|
|
"changeAfter": "30000",
|
|
"changeBefore": "杭州士兰微电子股份有限公司;",
|
|
"changeDate": "2013-12-02 00:00:00",
|
|
"changeField": "出资额变更"
|
|
},
|
|
{
|
|
"changeAfter": "杭州士兰微电子股份有限公司,货币;",
|
|
"changeBefore": "杭州士兰微电子股份有限公司;",
|
|
"changeDate": "2013-11-28 00:00:00",
|
|
"changeField": "股东或股份发起人改变姓名或名称变更"
|
|
},
|
|
{
|
|
"changeAfter": "其他有限责任公司",
|
|
"changeBefore": "有限责任公司（自然人投资或控股的法人独资）",
|
|
"changeDate": "2020-11-10 00:00:00",
|
|
"changeField": "市场主体类型变更"
|
|
},
|
|
{
|
|
"changeAfter": "1152",
|
|
"changeBefore": "1190",
|
|
"changeDate": "2012-05-16 00:00:00",
|
|
"changeField": "市场主体类型变更"
|
|
},
|
|
{
|
|
"changeAfter": "120000.000000万人民币",
|
|
"changeBefore": "100000万人民币",
|
|
"changeDate": "2021-10-20 00:00:00",
|
|
"changeField": "注册资本变更"
|
|
},
|
|
{
|
|
"changeAfter": "杭州士兰微电子股份有限公司 出资 81000万人民币;四川省集成电路和信息安全产业投资基金有限公司 出资 15000万人民币;阿坝州振兴产业发展股权投资基金合伙企业（有限合伙） 出资 4000万人民币;",
|
|
"changeBefore": "杭州士兰微电子股份有限公司 出资 81000万人民币;",
|
|
"changeDate": "2020-11-10 00:00:00",
|
|
"changeField": "投资人(股权)变更"
|
|
},
|
|
{
|
|
"changeAfter": "55000",
|
|
"changeBefore": "50000",
|
|
"changeDate": "2016-05-04 00:00:00",
|
|
"changeField": "注册资本(金)变更"
|
|
},
|
|
{
|
|
"changeAfter": "50000",
|
|
"changeBefore": "40000",
|
|
"changeDate": "2015-05-13 00:00:00",
|
|
"changeField": "其他事项备案"
|
|
},
|
|
{
|
|
"changeAfter": "55000",
|
|
"changeBefore": "杭州士兰微电子股份有限公司;",
|
|
"changeDate": "2016-05-04 00:00:00",
|
|
"changeField": "股东或股份发起人改变姓名或名称变更"
|
|
},
|
|
{
|
|
"changeAfter": "2030-11-17 00:00:00",
|
|
"changeBefore": "2012-11-18 00:00:00",
|
|
"changeDate": "2011-08-23 00:00:00",
|
|
"changeField": "注册资本变更"
|
|
},
|
|
{
|
|
"changeAfter": "40000",
|
|
"changeBefore": "杭州士兰微电子股份有限公司;",
|
|
"changeDate": "2014-10-23 00:00:00",
|
|
"changeField": "股东或股份发起人改变姓名或名称变更"
|
|
},
|
|
{
|
|
"changeAfter": "杭州士兰微电子股份有限公司;",
|
|
"changeBefore": "杭州士兰明芯科技有限公司;杭州士兰微电子股份有限公司;",
|
|
"changeDate": "2012-05-16 00:00:00",
|
|
"changeField": "股东或股份发起人改变姓名或名称变更"
|
|
},
|
|
{
|
|
"changeAfter": "2030-11-17",
|
|
"changeBefore": "2012-11-18",
|
|
"changeDate": "2011-08-23 00:00:00",
|
|
"changeField": "经营期限(营业期限)变更"
|
|
},
|
|
{
|
|
"changeAfter": "杭州士兰微电子股份有限公司,货币;",
|
|
"changeBefore": "杭州士兰微电子股份有限公司;",
|
|
"changeDate": "2017-10-24 00:00:00",
|
|
"changeField": "出资方式变更"
|
|
},
|
|
{
|
|
"changeAfter": "杭州士兰微电子股份有限公司,货币;",
|
|
"changeBefore": "杭州士兰微电子股份有限公司;",
|
|
"changeDate": "2017-10-24 00:00:00",
|
|
"changeField": "股东或股份发起人改变姓名或名称变更"
|
|
},
|
|
{
|
|
"changeAfter": "杭州士兰微电子股份有限公司,货币;",
|
|
"changeBefore": "杭州士兰微电子股份有限公司;",
|
|
"changeDate": "2018-02-06 00:00:00",
|
|
"changeField": "股东或股份发起人改变姓名或名称变更"
|
|
},
|
|
{
|
|
"changeAfter": "20000",
|
|
"changeBefore": "14000",
|
|
"changeDate": "2011-08-23 00:00:00",
|
|
"changeField": "实收资本变更"
|
|
},
|
|
{
|
|
"changeAfter": "/",
|
|
"changeBefore": "/",
|
|
"changeDate": "2014-03-26 00:00:00",
|
|
"changeField": "其他事项备案"
|
|
},
|
|
{
|
|
"changeAfter": "",
|
|
"changeBefore": "",
|
|
"changeDate": "2016-01-13 00:00:00",
|
|
"changeField": "其他事项备案"
|
|
},
|
|
{
|
|
"changeAfter": "2030-11-17",
|
|
"changeBefore": "2012-11-18",
|
|
"changeDate": "2011-08-23 00:00:00",
|
|
"changeField": "注册资本变更"
|
|
},
|
|
{
|
|
"changeAfter": "14000",
|
|
"changeBefore": "10000",
|
|
"changeDate": "2011-06-24 00:00:00",
|
|
"changeField": "其他事项备案"
|
|
}
|
|
],
|
|
"contactInfo": {
|
|
"email": "497837510@qq.com",
|
|
"phoneNumber": "028-84925088",
|
|
"website": [
|
|
{
|
|
"name": "成都士兰半导体制造有限公司",
|
|
"url": "www.silancd.cn"
|
|
},
|
|
{
|
|
"name": "成都士兰半导体制造有限公司",
|
|
"url": "www.silancd.com"
|
|
}
|
|
]
|
|
},
|
|
"employees": [
|
|
{
|
|
"employeeName": "江忠永",
|
|
"position": "监事"
|
|
},
|
|
{
|
|
"employeeName": "范伟宏",
|
|
"position": "总经理"
|
|
},
|
|
{
|
|
"employeeName": "陈向东",
|
|
"position": "执行董事"
|
|
}
|
|
],
|
|
"exceptions": [],
|
|
"industry": {
|
|
"industryL1Name": "制造业",
|
|
"industryL2Name": "计算机、通信和其他电子设备制造业"
|
|
},
|
|
"liquidation": null,
|
|
"mPledges": [
|
|
{
|
|
"debtSecuredAmount": "5000万人民币",
|
|
"publicDate": null,
|
|
"registerDate": "2017-02-16 00:00:00",
|
|
"registerNo": "（金堂）工商动抵字[2017]第0009号",
|
|
"registerOffice": "金堂县市场和质量监督管理局",
|
|
"status": "有效"
|
|
}
|
|
],
|
|
"originalName": [],
|
|
"partners": [
|
|
{
|
|
"capiDate": null,
|
|
"investName": null,
|
|
"investType": "货币",
|
|
"shoudDate": "2021-12-31 00:00:00",
|
|
"stockCapital": "84000.0",
|
|
"stockName": "杭州士兰微电子股份有限公司",
|
|
"stockPercent": "0.7000",
|
|
"stockRealcapital": null,
|
|
"stockType": "企业法人"
|
|
},
|
|
{
|
|
"capiDate": null,
|
|
"investName": null,
|
|
"investType": "货币",
|
|
"shoudDate": "2020-12-30 00:00:00",
|
|
"stockCapital": "4000.0",
|
|
"stockName": "阿坝州振兴产业发展股权投资基金合伙企业（有限合伙）",
|
|
"stockPercent": "0.0333",
|
|
"stockRealcapital": null,
|
|
"stockType": "合伙企业"
|
|
},
|
|
{
|
|
"capiDate": null,
|
|
"investName": null,
|
|
"investType": "货币",
|
|
"shoudDate": "2021-12-31 00:00:00",
|
|
"stockCapital": "32000.0",
|
|
"stockName": "四川省集成电路和信息安全产业投资基金有限公司",
|
|
"stockPercent": "0.2667",
|
|
"stockRealcapital": null,
|
|
"stockType": "企业法人"
|
|
}
|
|
],
|
|
"pledges": [],
|
|
"punishes": [],
|
|
"shiXinItems": [],
|
|
"spotChecks": [
|
|
{
|
|
"consequence": "正常",
|
|
"date": "2017-07-13 00:00:00",
|
|
"executiveOrg": "金堂县市场和质量监督管理局",
|
|
"no": null,
|
|
"remark": null,
|
|
"type": "抽查"
|
|
}
|
|
],
|
|
"taxCreditltems": [
|
|
{
|
|
"level": "A",
|
|
"taxPayerName": "成都士兰半导体制造有限公司",
|
|
"taxPayerNo": "510121564470905",
|
|
"year": "2014"
|
|
},
|
|
{
|
|
"level": "A",
|
|
"taxPayerName": "成都士兰半导体制造有限公司",
|
|
"taxPayerNo": "91510121564470905W",
|
|
"year": "2019"
|
|
},
|
|
{
|
|
"level": "A",
|
|
"taxPayerName": "成都士兰半导体制造有限公司",
|
|
"taxPayerNo": "91510121564470905W",
|
|
"year": "2020"
|
|
},
|
|
{
|
|
"level": "A",
|
|
"taxPayerName": "成都士兰半导体制造有限公司",
|
|
"taxPayerNo": "91510121564470905W",
|
|
"year": "2020"
|
|
}
|
|
],
|
|
"zhiXingItems": []
|
|
}
|
|
} |